?2011 fairchild semiconductor corporation isl9v5036p3_f085 rev. c5, august 2011 isl9v5036p3_f085 ecospark? 500mj,360,n-channel ignition igbt device ma xi mum ratings t a = 25c unless otherwise n oted symb ol p arameter ratings units bv cer collect o r to emitter breakdown voltage (i c = 1 ma) 390 v bv ecs emitt e r to collector voltage - reverse battery condition (i c = 10 ma) 24 v e scis2 5 at star t ing t j = 25c, i scis = 38.5a, l = 670 hy 500 mj e scis15 0 at star t ing t j = 150c, i scis = 30a, l = 670 hy 300 mj i c25 collect o r current continuous, at t c = 25c , see fig 9 46 a i c110 collecto r current continuous, at t c = 110c, s ee fig 9 31 a v gem gate to e m itter voltage continuous 10 v p d powe r dissipat ion total t c = 25c 250 w pow e r dissipation derating t c > 25 c 1.67 w/c t j operating junct i on temperature range -40 to 175 c t stg storage junct i on temperature range -40 to 175 c t l max lead te mp for soldering (leads at 1.6mm from case for 10s) 300 c t pkg max lead t e mp for soldering (package body for 10s) 260 c esd electrostatic discharge voltage at 100pf, 1500 ? 4k v isl9v5036p3_f085 ec o s pa rk 50 0mj , 360v, n-channel ignition igbt general de scr iption the isl9v5036p3 _f085 is the next generation igbt that offer outstanding scis capability in the to-220 plastic package. th is device is intended for use in automotive ignition circuit, specifically as coil driver. internal diode provide voltage clamping without the need for external component. device s can be custom made to specific clamp voltages. contact your nearest fairchild sales office for more information. formerly developmental type 49443 applicati o ns automot iv e ignition coil driver circuits coil-on plug applications featur e s indust ry standard to-220 package sci s energy = 500mj at t j = 25 o c logic level g ate drive package collect or (flange) gate collecto r emitter r 2 r 1 symbol jedec to-220ab e g c august 2011 qualified to aec q101 rohs compliant ? ecosp ark ? www.fairchildsemi.com
isl9v5036p3_f085 ecospark? 500mj,360,n-channel ignition igbt package mar k ing and ordering information ele c t rical characteristics t a = 25 c unless otherwise noted o ff st ate characteristics on state characteristics dynamic characteristics switching characteristics t her mal characteristics de vice m arking device package reel size tape width quantity v5036p isl9v5036p3_f085 to-220a b tube n/a 50 s ymbol parameter test conditions min typ max units bv ce r collec tor to emitter breakdown voltage i c = 2 ma, v ge = 0, r g = 1k ?, see fi g. 15 t j = - 40 to 150 c 330 360 390 v bv ce s collec tor to emitter breakdown voltage i c = 10ma, v ge = 0, r g = 0 , see fi g. 15 t j = - 40 to 150 c 360 390 420 v bv ec s em itte r to collector breakdown voltage i c = -75ma, v ge = 0v, t c = 25 c 30 - - v bv ge s g ate to emitter breakdown voltage i ge s = 2ma 12 14 - v i ce r collect or t o emitter leakage current v ce r = 250v, r g = 1k ?, see fi g. 11 t c = 25 c- - 2 5 a t c = 15 0 c- - 1 ma i ec s em itte r to collector leakage current v ec = 24v, see f ig. 11 t c = 25 c- - 1 ma t c = 15 0 c- - 4 0 ma r 1 ser ies g ate resistance - 75 - ? r 2 g ate to emitter resistance 10k - 30k ? v ce (sat) collec tor to emitter saturation voltage i c = 10a, v ge = 4. 0v t c = 25 c, see fig. 4 - 1.17 1.60 v v ce (sa t) collec tor to emitter saturation voltage i c = 15a, v ge = 4. 5v t c = 150 c - 1. 50 1.80 v q g( on) g ate charge i c = 10a, v ce = 12v, v ge = 5v, see fig. 14 -32-nc v ge (th ) g ate to emitter threshold voltage i c = 1.0ma, v ce = v ge , see f ig. 10 t c = 25 c1.3 - 2.2 v t c = 150 c0. 75- 1.8v v ge p g ate to emitter plateau voltage i c = 10 a, v ce = 12v - 3 .0 - v t d( on) r curr ent tu rn-on delay time-resistive v ce = 14v , r l = 1 ?, v ge = 5v, r g = 1k ? t j = 25 c, see f ig. 12 -0.74s t rr curr ent rise t ime-resistive - 2.1 7 s t d( off)l curr ent tu rn-off delay time-inductive v ce = 300v , l = 2mh , v ge = 5v, r g = 1k ? t j = 25 c, see f ig. 12 - 10.8 15 s t fl curr ent fa ll time-inductive - 2.8 15 s scis self clamped inductive switching t j = 25 c, l = 670 h, r g = 1k ?, v ge = 5v, see f ig. 1 & 2 - - 500 mj r jc t hermal resistance j unction-case - - 0. 6 c/w ?2011 fairchild semiconductor corporation isl9v5036p3_f085 rev. c5, august 2011 www.fairchildsemi.com
isl9v5036p3_f085 ecospark? 500mj,360,n-channel ignition igbt typical characteristics figure 1. self clamped inductive switching current vs time in clamp figure 2. self clamped inductive switching current vs inductance figure 3. collector to emitter on-state voltage vs junction temperature figure 4.collector to emitter on-state voltage vs junction temperature figure 5. collector current vs collector to emitter on-state voltage figure 6. collector current vs collector to emitter on-state voltage t clp , time in clamp (s) i scis , inductive switching current (a) 35 30 10 45 20 25 0 350 300 0250 100 50 150 200 t j = 25 c r g = 1k , v ge = 5v,v dd = 14v 5 15 40 scis curves valid for v clamp voltages of <390v t j = 150 c i scis , inductive switching current (a) 010 2468 l, inductance (mhy) t j = 150 c r g = 1k , v ge = 5v,v dd = 14v t j = 25 c scis curves valid for v clamp voltages of <390v 35 30 10 45 20 25 0 5 15 40 1.10 1.05 1.00 0.95 0.90 25 -25 175 125 75 -50 0 50 100 150 t j , junction temperature ( c) v ce , collector to emitter voltage (v) v ge = 4.0v v ge = 3.7v v ge = 5.0v v ge = 8.0v i ce = 6a v ge = 4.5v 0.85 25 -25 175 125 75 -50 0 50 100 150 1.25 1.20 1.15 1.10 1.05 v ce , collector to emitter voltage (v) 1.00 t j , junction temperature ( c) i ce = 10a v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 20 40 02.0 1.0 3.0 4.0 50 30 10 0 v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v t j = - 40 c i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 40 0 50 30 02.0 1.0 3.0 4.0 20 10 v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v t j = 25 c ?2011 fairchild semiconductor corporation isl9v5036p3_f085 rev. c5, august 2011 www.fairchildsemi.com
isl9v5036p3_f085 ecospark? 500mj,360,n-channel ignition igbt figure 7. collector to emitter on-state voltage vs collector current figure 8. transfer characteristics figure 9. dc collector current vs case temperature figure 10. threshold voltage vs junction temperature figure 11. leakage current vs junction temperature figure 12. switching time vs junction temperature typical characteristics (continued) i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 0 50 40 02.0 1.0 3.0 4.0 30 t j = 175 c v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v 20 10 i ce , collector to emitter current (a) v ge , gate to emitter voltage (v) 2.0 1.0 3.0 4.0 50 40 30 0 2.5 1.5 3.5 4.5 pulse duration = 250s duty cycle < 0.5%, v ce = 5v t j = 25 c t j = 175 c t j = -40 c 20 10 i ce , dc collector current (a) t c , case temperature ( c) 50 25 175 125 75 50 100 150 40 30 20 10 0 v ge = 4.0v 175 50 100 2.0 1.8 1.6 1.4 1.0 v th , threshold voltage (v) t j , junction temperature ( c) 150 0 125 1.2 v ce = v ge i ce = 1ma -50 75 25 -25 leakage current (a) t j , junction temperature ( c) 1000 10 0.1 10000 100 1 25 -25 175 125 75 -50 0 50 100 150 v ecs = 24v v ces = 300v v ces = 250v 25 175 125 75 50 100 150 t j , junction temperature ( c) switching time (s) 20 16 12 6 2 i ce = 6.5a, v ge = 5v, r g = 1k resistive t off inductive t off resistive t on 10 14 18 8 4 ?2011 fairchild semiconductor corporation isl9v5036p3_f085 rev. c5, august 2011 www.fairchildsemi.com
isl9v5036p3_f085 ecospark? 500mj,360,n-channel ignition igbt figure 13. capacitance vs collector to emitter voltage figure 14. gate charge figure 15. breakdown voltage vs series gate resistance figure 16. igbt normalized transient thermal impedance, junction to case typical characteristics (continued) c, capacitance (pf) v ce , collector to emitter voltage (v) 3000 1000 500 1500 010 5 152025 0 c ies frequency = 1 mhz c oes c res 2500 2000 q g , gate charge (nc) v ge , gate to emitter voltage (v) 0 2 4 8 0 10203040 50 3 5 7 6 1 i g(ref) = 1ma, r l = 0.6 t j = 25 c v ce = 6v v ce = 12v bv cer , breakdown voltage (v) r g , series gate resistance ( ) 360 352 348 356 10 2000 1000 3000 344 100 354 350 358 346 t j = - 40 c t j = 25 c t j = 175 c i cer = 10ma 342 340 z thjc , normalized thermal response t 1 , rectangular pulse duration (s) 10 0 10 -2 10 -1 10 -2 10 -3 10 -4 10 -5 10 -1 10 -6 t 1 t 2 p d duty factor, d = t 1 / t 2 peak t j = (p d x z jc x r jc ) + t c 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 10 -3 10 -4 ?2011 fairchild semiconductor corporation isl9v5036p3_f085 rev. c5, august 2011 www.fairchildsemi.com
isl9v5036p3_f085 ecospark? 500mj,360,n-channel ignition igbt test circuits and waveforms figure 17. inductive switching test circuit figure 18. t on and t off switching test circuit figure 19. energy test circuit figure 20. energy waveforms r g g c e v ce l pulse gen dut r g = 1k + - v ce dut 5v c g e load r or l t p v gs 0.01 l i as + - v ce v dd r g dut vary t p to obtain required peak i as 0v v dd v ce bv ces t p i as t av 0 ?2011 fairchild semiconductor corporation isl9v5036p3_f085 rev. c5, august 2011 www.fairchildsemi.com
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uhc ? ultra frfet? unifet? vcx? visualmax? xs? tm ? tm ? tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supp lementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by c ountry on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i55
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